Professor Hudait directs a research laboratory with emphasis on the heterogeneous integration of strained and bandgap engineered group IV based materials, compound semiconductor heterostructure materials, characterization and device processing. Current research interests in his group include group IV based quantum-well laser, GeSn and InAsSb based tunable and flexible long wavelength infra-red photodetectors, quantum-well FET, tunnel FET, co-integrated Ge/InGa(Al)As CMOS, and other technologies for energy efficient nanoelectronics. His group is exploring strain and bandgap engineering for enhancing mobility, defect engineering, minority carrier lifetime, monolithic integration of alternate channel CMOS. The results of his research have been reported in over 124 archival journal publications and over 60 conference and seminar presentations.

Dr. Hudait received two Divisional Recognition Awards (DRA) from Intel Corporation for "successful demonstration of high-performance III-V transistor on silicon substrate" and "successful integration of III-V transistor layers on Si substrate" in 2008 and 2006, respectively. He also received "Young Research Award" in 1998 for the paper presented during 5th IUMRS Conference.

His work on heterogeneous integration of arsenide-based quantum-well transistors for low-power logic applications was extended to integrating composite high-k gate stack on Si substrate. This achievement was recognized by several media press releases in 2007 and 2009.

60 issued US patents, 15 European Documents, 9 German Beta Patents, 2 Japan abstract, more than 20 patents pending at USPTO and 7 pre-patents from Virginia Tech.

Over 125 peer reviewed journal papers, 50 peer-reviewed international conference papers and 20 conference presentations.

After serving in the Intel Corporation's Advanced Transistor and Nanotechnology Group, Dr. Hudait joined the ECE department at Virginia Tech in 2009. At Intel, he led a joint team of researchers from Intel and IQE and demonstrated the world's first InGaAs quantum-well field effect transistors grown on Si substrate with thin total buffer layer thickness down to < 1 µm operating at room temperature with record power-delay performance at low supply voltage of 0.5V. This work is recognized by the industry and academia as a breakthrough in high-speed and ultra-low power transistor research onto Si substrate (as reported at premier conferences and published scientific journals).

Dr. Hudait was responsible for the research and development of compound semiconductors based thermophotovoltaics, photovoltaics, and their heterogeneous integration onto Si, high electron mobility transistors, and emerging nanoelectronic devices using molecular beam epitaxy at The Ohio State University. He led R&D program in MOCVD growth and device processing of III-V compound semiconductors for space solar cell applications at Indian Institute of Science, India before moving to USA. He was deputed at Indian Institute of Science from Central Research Laboratory of Bharat Electronics for development of space solar cells using MOCVD growth technique.